tm november 2007 FFPF20UP60DN 20 a, 600 v, ultrafast dual diode ?2007 fairchild semiconductor corporation FFPF20UP60DN rev. a www.fairchildsemi.com 1 FFPF20UP60DN features ? ultrafast rcovery t rr = 70 ns (@ i f = 10 a) ? max forward voltage, v f = 2.2 v (@ t c = 25c) ? 600 v r everse voltage and h igh reliability ? av alanche energy rated ? rohs compliant applications ? general purpose ? switching mode power supply ? boost diode in continuous mode power factor corrections ? power switching circuits 20 a, 600 v, ultrafast dual diode the FFPF20UP60DN is a ultrafast dual diode with low forward voltage drop. this device is intended for use as freewheeling and clamping diodes in a v ariety of switching power supplies and other power switching applications. it is specially suited for use in s witching power supplies and industrial applic ation. absolute maximum ratings t c = 25 o c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter rating unit v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current @ t c = 103 o c 10 a i fsm non-repetitive peak surge current 60hz single half-sine wave 50 a t j , t stg operating and storage temperature range -65 to +150 o c symbol parameter rating unit r jc maximum thermal resistance, junction to case 7 o c/w device marking device package reel size tape width quantity f20up60dn FFPF20UP60DNtu to-220f - - 50 to-220f 1 2 3 1. anode 2. cathode 3. anode 1 2 3
FFPF20UP60DN 20 a, 600 v, ultrafast dual diode www.fairchildsemi.com 2 electrical characteristics t c = 25 o c unless otherwise noted symbol parameter min. typ. max. unit v f 1 i f = 10 a i f = 10 a t c = 25 o c t c = 100 o c - - - - 2.2 2.0 v i r 1 v r = 600 v v r = 600 v t c = 25 o c t c = 100 o c - - - - 100 500 a t rr i f = 10 a, di/dt = 200 a/s, v r = 390 v t c = 25 o c - 53 70 ns t rr i rr q rr i f = 1 a, di/dt = 100 a/s, v r = 30 v t c = 25 o c - - - 30 1.5 20 40 2 30 ns a nc w avl avalan che energy ( l = 40 mh) 10 - - mj test circuit and waveforms notes: 1: pulse: test pulse width = 300 s, duty cycle = 2% ?2007 fairchild semiconductor corporation FFPF20UP60DN rev. a
FFPF20UP60DN 20 a, 600 v, ultrafast dual diode www.fairchildsemi.com 3 typical performance characteristics figure 1. typical forward voltage drop figure 2. typical reverse current vs. forward current vs. reverse voltage figure 3. typical junction capacitance figure 4. typical reverse recovery time vs. di/d t figure 5. typical reverse recovery figure 6. forward current derating curve current vs. di/dt 0.0 0.5 1.0 1.5 2.0 0.1 1 10 t c = 100 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 30 100 200 300 400 500 600 0.1 1 10 100 1000 10000 t c = 25 o c t c = 100 o c reverse current , i r [ na ] reverse voltage, v r [v] 10 0.1 1 10 100 0 25 50 75 100 125 typical capacitance at 0v = 124 pf reverse voltage, v r [v] capacitances , cj [pf] 100 150 200 250 300 350 400 40 80 120 t c = 25 o c t c = 100 o c reverse recovery time, t rr [ns] di/dt [ a/ s ] 160 100 150 200 250 300 350 400 2 4 6 8 10 t c = 25 o c t c = 100 o c reverse recovery current, i rr [a] di/dt [ a/ s ] 25 50 75 100 125 150 0 4 8 12 16 20 average forward current, i f(av) [a] case temperature, t c [ o c ] ?2007 fairchild semiconductor corporation FFPF20UP60DN rev. a
FFPF20UP60DN 20 a, 600 v, ultrafast dual diode www.fairchildsemi.com 4 mechanical dimensions to-220f (7.00) (0.70) max1.47 (30) #1 3.30 0.1 0 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.2 0 0.35 0.10 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 dimensions in millimeters ?2007 fairchild semiconductor corporation FFPF20UP60DN rev. a
FFPF20UP60DN 20 a, 600 v, ultrafast dual diode www.fairchildsemi.com 5 ?2007 fairchild semiconductor corporation FFPF20UP60DN rev. a
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